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2
RF Device Data
Freescale Semiconductor
MRFE6VP6300HR3 MRFE6VP6300HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(1)
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
Drain--Source Breakdown Voltage
(VGS
=0Vdc,ID
=50mA)
V(BR)DSS
130
?
?
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS
=50Vdc,VGS
=0Vdc)
IDSS
?
?
5
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 100 Vdc, VGS
=0Vdc)
IDSS
?
?
10
μAdc
On Characteristics
Gate Threshold Voltage
(1)
(VDS
=10Vdc,ID
= 480
μAdc)
VGS(th)
1.7
2.2
2.7
Vdc
Gate Quiescent Voltage
(VDD
=50Vdc,ID
= 100 mAdc, Measured in Functional Test)
VGS(Q)
2.0
2.5
3.0
Vdc
Drain--Source On--Voltage
(1)
(VGS
=10Vdc,ID
=1Adc)
VDS(on)
?
0.25
?
Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
0.8
?
pF
Output Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Coss
?
76
?
pF
Input Capacitance
(VDS
=50Vdc,VGS
=0Vdc±
30 mV(rms)ac @ 1 MHz)
Ciss
?
188
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) VDD
=50Vdc,IDQ
= 100 mA, Pout
= 300 W Peak (60 W Avg.), f = 230 MHz,
Pulsed, 100
μsec Pulse Width, 20% Duty Cycle
Power Gain
Gps
25.0
26.5
28.0
dB
Drain Efficiency
ηD
72.0
74.0
?
%
Input Return Loss
IRL
?
-- 1 6
-- 9
dB
Load Mismatch
(In Freescale Application Test Fixture, 50 ohm system) VDD
=50Vdc,IDQ
= 100 mA
VSWR 65:1 at all Phase Angles
Pulsed: Pout
= 300 W Peak (60 W Avg.), f = 230 MHz, Pulsed,
100
μsec Pulse Width, 20% Duty Cycle
CW: Pout
= 300 W Avg., f = 130 MHz
Ψ
No Degradation in Output Power
1. Each side of device measured separately.
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